n-channel enhancement mode power mosfet description the RM40N100LD uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. general features ? v ds = 100v,i d =40a r ds(on) < 17m @ v gs =10v (typ:14.5m) ? special process technology for high esd capability ? high density cell design for ultra low rdson ? fully characterized avalanche voltage and current ? good stability and uniformity with high e as ? excellent package for good heat dissipation application ? power switching application ? hard switched and hig h frequency circuits ? uninterruptible power supply 100% uis tested! 100% vds tested! schematic diagram marking and pin assignment to-252-2l top view package marking and ordering information device marking device device package reel size tape width quantity 40n100 RM40N100LD to-252-2l - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v drain current-continuous i d 40 a drain current-continuous(t c =100 ) i d (100 ) 28 a pulsed drain current i dm 160 a maximum power dissipation p d 140 w derating factor - 0.94 w/ single pulse avalanche energy (note 5) e as 520 mj operating junction and storage temperature range t j ,t stg -55 to 175 RM40N100LD 2016-12 rev:o15 g s d
thermal characteristic thermal resistance,junction-to-case (note 2) r jc 1.07 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 100 110 - v zero gate voltage drain current i dss v ds =100v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 2 3 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =28a - 14.5 17 m forward transconductance g fs v ds =25v,i d =28a 32 - - s dynamic characteristics (note4) input capacitance c lss - 3400 - pf output capacitance c oss - 290 - pf reverse transfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 221 - pf switching characteristics (note 4) turn-on delay time t d(on) - 15 - ns turn-on rise time t r - 11 - ns turn-off delay time t d(off) - 52 - ns turn-off fall time t f vdd=30v,id=2a,rl=15, rg=2.5,vgs=10v - 13 - ns total gate charge q g - 94 - nc gate-source charge q gs - 16 - nc gate-drain charge q gd id=30a,vdd=30v,vgs=10v - 24 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =28a - 0.85 1.2 v diode forward current (note 2) i s - - 40 a reverse recovery time t rr - 33 ns reverse recovery charge qrr tj = 25c, if = 28a di/dt = 100a/s (note3) - 54 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition ? tj=25 ,v dd =50v,v g =10v,l=0.5mh,rg=25 " " " " " " "
test circuit 1 ? ? e as test circuit 2 ? gate charge test circuit 3 ? switch time test circuit " " " " " " "
vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ? ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) rating and characteristics curves (RM40N100LD) " " " " " " "
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance rating and characteristics curves (RM40N100LD) " " " " " " "
to-252 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 2.200 2.400 0.087 0.094 a1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 d 6.500 6.700 0.256 0.264 d1 5.100 5.460 0.201 0.215 d2 4.830 typ. 0.190 typ. e 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 l 9.800 10.400 0.386 0.409 l1 2.900 typ. 0.114 typ. l2 1.400 1.700 0.055 0.067 l3 1.600 typ. 0.063 typ. l4 0.600 1.000 0.024 0.039 1.100 1.300 0.043 0.051 e e e e h 0.000 0.300 0.000 0.012 v 5.350 typ. 0.211 typ. " " " " " " "
rectron inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. rectron inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. data sheet specifications and its information contained are intended to provide a product description only. "typical" paramet- ers which may be included on rectron data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. rectron inc does not assume any liability arising out of the application or use of any product or circuit. rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of rectron inc. customers using or selling rectron components for use in such applications do so at their own risk and shall agree to fully indemnify rect- ron inc and its subsidiaries harmless against all claims, damages and expendit- ures. disclaimer notice
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